硅太陽能電(dian)池是(shi)目前應用(yong)最廣泛的(de)電(dian)池類別。大面(mian)積、薄(bo)片化(hua)(hua)、高(gao)效率以(yi)及(ji)高(gao)自動化(hua)(hua)集(ji)約生產(chan)將是(shi)光伏(fu)硅電(dian)池工業的(de)發(fa)展趨(qu)勢。通(tong)過降(jiang)低(di)電(dian)池的(de)硅材料成(cheng)本，提升(sheng)光電(dian)轉(zhuan)換效率與延(yan)長其使用(yong)壽命(ming)來降(jiang)低(di)單(dan)位(wei)(wei)電(dian)池的(de)發(fa)電(dian)成(cheng)本。通(tong)過集(ji)約化(hua)(hua)生產(chan)節約人(ren)力資(zi)源降(jiang)低(di)單(dan)位(wei)(wei)電(dian)池制造成(cheng)本。通(tong)過合理的(de)機制建立(li)優秀的(de)技(ji)術(shu)團隊、充分保(bao)證技(ji)術(shu)上的(de)持續創(chuang)新是(shi)未來光伏(fu)企業發(fa)展的(de)核心競爭力所在(zai)。

　　降(jiang)低硅(gui)(gui)(gui)片(pian)厚(hou)度是減少(shao)(shao)硅(gui)(gui)(gui)材(cai)料消耗(hao)、降(jiang)低晶硅(gui)(gui)(gui)太陽(yang)電池(chi)成(cheng)本(ben)的有效技(ji)術(shu)措(cuo)施，是光伏技(ji)術(shu)進步的重要(yao)(yao)方面。30 多(duo)年來，太陽(yang)電池(chi)硅(gui)(gui)(gui)片(pian)厚(hou)度從(cong)70 年的450～500μm 降(jiang)低到目前的150～180μm，降(jiang)低了(le)一(yi)半以上，硅(gui)(gui)(gui)材(cai)料用(yong)量大大減少(shao)(shao)，對太陽(yang)電池(chi)成(cheng)本(ben)降(jiang)低起到了(le)重要(yao)(yao)作用(yong)，是技(ji)術(shu)進步促進成(cheng)本(ben)降(jiang)低的重要(yao)(yao)范例之一(yi)。

　　在電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)制(zhi)(zhi)造工藝(yi)方面(mian)， 人類可以(yi)說無所不用其極。通過離(li)(li)子注(zhu)入技術提(ti)(ti)高摻(chan)雜的(de)均勻(yun)性(xing)。利(li)用不足100微(wei)米的(de)金(jin)剛(gang)線(xian)(xian)，提(ti)(ti)高切割(ge)速度(du)，降低線(xian)(xian)損和(he)硅片厚度(du)。在電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)表面(mian)等離(li)(li)子制(zhi)(zhi)絨，延長入射(she)光光程，并通過內表面(mian)反射(she)減少(shao)反射(she)損失，提(ti)(ti)高轉(zhuan)換效(xiao)(xiao)率(lv)。僅靠工藝(yi)的(de)改進(jin)對電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)效(xiao)(xiao)率(lv)的(de)提(ti)(ti)升空(kong)間已經越來越有限，電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)效(xiao)(xiao)率(lv)的(de)進(jin)一步(bu)提(ti)(ti)升將依賴新(xin)結(jie)構(gou)、新(xin)工藝(yi)的(de)建(jian)立(li)。具有產(chan)業化(hua)前(qian)景的(de)新(xin)結(jie)構(gou)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)包括選擇性(xing)發射(she)極電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)、異(yi)質結(jie)電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)、背面(mian)主柵電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)及N型電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)等。這些電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)結(jie)構(gou)采用不同的(de)技術途徑解(jie)決(jue)了電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)的(de)柵線(xian)(xian)細化(hua)、選擇性(xing)擴散、表面(mian)鈍化(hua)等問題，可以(yi)將電(dian)(dian)(dian)池(chi)(chi)(chi)(chi)(chi)(chi)產(chan)業化(hua)效(xiao)(xiao)率(lv)提(ti)(ti)升2～4個百分點。